Invention Grant
- Patent Title: Injection lock power amplifier with back-gate bias
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Application No.: US16550385Application Date: 2019-08-26
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Publication No.: US10790789B2Publication Date: 2020-09-29
- Inventor: See T. Lee , Abdellatif Bellaouar
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: US KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: US KY Grand Cayman
- Agency: Gibb & Riley, LLC
- Agent David A. Cain, Esq.
- Main IPC: H03F3/68
- IPC: H03F3/68 ; H03F1/56 ; H03F3/24 ; H03F3/193 ; H03B5/12 ; H03F3/195 ; H03F3/26

Abstract:
In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
Public/Granted literature
- US20190379338A1 INJECTION LOCK POWER AMPLIFIER WITH BACK-GATE BIAS Public/Granted day:2019-12-12
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