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公开(公告)号：US20190379338A1
公开(公告)日：2019-12-12
申请号：US16550385
申请日：2019-08-26
Applicant: GLOBALFOUNDRIES INC.
Inventor： See T. Lee , Abdellatif Bellaouar
Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
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公开(公告)号：US10790789B2
公开(公告)日：2020-09-29
申请号：US16550385
申请日：2019-08-26
Applicant: GLOBALFOUNDRIES INC.
Inventor： See T. Lee , Abdellatif Bellaouar
Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
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公开(公告)号：US10469039B2
公开(公告)日：2019-11-05
申请号：US15933542
申请日：2018-03-23
Applicant: GLOBALFOUNDRIES INC.
Inventor： See T. Lee , Abdellatif Bellaouar
Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
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公开(公告)号：US20190296700A1
公开(公告)日：2019-09-26
申请号：US15933542
申请日：2018-03-23
Applicant: GLOBALFOUNDRIES INC.
Inventor： See T. Lee , Abdellatif Bellaouar
Abstract: In an exemplary structure, a transformer has a primary side and a secondary side. Output from the primary side is coupled to the secondary side. A first power supply is connected to a center tap of the primary side of the transformer. An oscillator includes a first transistor and a second transistor. The front-gate of the first transistor is connected to the drain of the second transistor and the primary side of the transformer. The front-gate of the second transistor is connected to the drain of the first transistor and the primary side of the transformer. A third transistor is connected to the first transistor and a fourth transistor is connected to the second transistor. The third and fourth transistors inject a desired frequency to the oscillator. A voltage source is connected to the back-gate of the first transistor and the back-gate of the second transistor.
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