Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16438026Application Date: 2019-06-11
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Publication No.: US10797042B2Publication Date: 2020-10-06
- Inventor: Wenzhen Wang , Hirotaka Takeno , Atsushi Okamoto
- Applicant: SOCIONEXT INC.
- Applicant Address: JP Kanagawa
- Assignee: SOCIONEXT INC.
- Current Assignee: SOCIONEXT INC.
- Current Assignee Address: JP Kanagawa
- Agency: McDermott Will & Emery LLP
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@291b4647
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L27/02 ; H01L27/092 ; H01L29/06 ; H01L23/528 ; H01L29/78 ; H01L23/522

Abstract:
A semiconductor device includes a semiconductor substrate, a first standard cell including a first active region and a second active region, and a power switching circuit including a first switching transistor electrically connected between a first interconnect and a second interconnect over the semiconductor substrate, and including a first buffer connected to a gate of the first switching transistor, the first buffer including a third active region and a fourth active region, and wherein the first buffer adjoins, in a plan view, the first standard cell in a first direction, wherein an arrangement of the first active region matches an arrangement of the third active region in a second direction different from the first direction, and wherein an arrangement of the second active region matches an arrangement of the fourth active region in the second direction.
Public/Granted literature
- US20190393206A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-12-26
Information query
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