Invention Grant
- Patent Title: Semiconductor device having a boundary structure, a package on package structure, and a method of making
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Application No.: US16382503Application Date: 2019-04-12
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Publication No.: US10804234B2Publication Date: 2020-10-13
- Inventor: Chien Ling Hwang , Yeong-Jyh Lin , Bor-Ping Jang , Hsiao-Chung Liang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L25/10
- IPC: H01L25/10 ; H01L23/14 ; H01L23/00 ; H01L23/498 ; H01L21/48
Abstract:
The present disclosure, in some embodiments, relates to a semiconductor structure. The semiconductor structure includes a substrate and a first conductive pad arranged over the substrate. A boundary structure is on an upper surface of the substrate around the first conductive pad. The boundary structure has one or more sidewalls defining an opening with a round shape over the first conductive pad.
Public/Granted literature
- US20190237422A1 SEMICONDUCTOR DEVICE HAVING A BOUNDARY STRUCTURE, A PACKAGE ON PACKAGE STRUCTURE, AND A METHOD OF MAKING Public/Granted day:2019-08-01
Information query
IPC分类:
