Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16052383Application Date: 2018-08-01
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Publication No.: US10833032B2Publication Date: 2020-11-10
- Inventor: Seong-Min Son , Jeong-Gi Jin , Jin-Ho An , Jin-Ho Chun , Kwang-Jin Moon , Ho-Jin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6e1f6526
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/485 ; H01L23/522

Abstract:
A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.
Public/Granted literature
- US20190067228A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-02-28
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