公开(公告)号：US09006902B2

公开(公告)日：2015-04-14

申请号：US14161034

申请日：2014-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Il Choi ,  Su-Kyoung Kim ,  Kun-Sang Park ,  Seong-Min Son ,  Jin-Ho An ,  Do-Sun Lee

IPC: H01L23/48 ,  H01L21/4763 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L23/5226 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L25/0657 ,  H01L2224/02351 ,  H01L2224/03462 ,  H01L2224/0384 ,  H01L2224/0401 ,  H01L2224/05547 ,  H01L2224/05548 ,  H01L2224/05556 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/13027 ,  H01L2224/131 ,  H01L2224/1329 ,  H01L2224/133 ,  H01L2224/1403 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/00

Abstract: A semiconductor device is provided having an insulating layer on a semiconductor substrate. The insulating layer and the semiconductor substrate define a through hole penetrating the semiconductor substrate and the insulating layer. A through electrode is provided in the through hole. A spacer is provided between the semiconductor substrate and the through electrode. An interconnection in continuity with the through electrode is provided on the insulating layer. A barrier layer covering a side and a bottom of the interconnection and a side of the through electrode is provided and the barrier layer is formed in one body.

Abstract translation: 提供了半导体器件，其在半导体衬底上具有绝缘层。 绝缘层和半导体衬底限定穿透半导体衬底和绝缘层的通孔。 通孔中设置有贯通电极。 在半导体衬底和贯通电极之间设置间隔物。 在绝缘层上设置与通孔电连接的互连。 设置覆盖互连的一侧和底部的阻挡层和通孔的一侧，并且阻挡层形成在一体中。

公开(公告)号：US10580726B2

公开(公告)日：2020-03-03

申请号：US16106645

申请日：2018-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Ho Chun ,  Seong-Min Son ,  Hyung-Jun Jeon ,  Kwang-Jin Moon ,  Jin-Ho An ,  Ho-Jin Lee ,  Atsushi Fujisaki

IPC: H01L23/498 ,  H01L23/525 ,  H01L23/532 ,  H01L23/31 ,  H01L23/00 ,  H01L21/768 ,  H01L23/48

Abstract: A semiconductor device and a method of manufacturing the same, the device including a through-hole electrode structure extending through a substrate; a redistribution layer on the through-hole electrode structure; and a conductive pad, the conductive pad including a penetrating portion extending through the redistribution layer; and a protrusion portion on the penetrating portion, the protrusion portion protruding from an upper surface of the redistribution layer, wherein a central region of an upper surface of the protrusion portion is flat and not closer to the substrate than an edge region of the upper surface of the protrusion portion.

公开(公告)号：US10833032B2

公开(公告)日：2020-11-10

申请号：US16052383

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min Son ,  Jeong-Gi Jin ,  Jin-Ho An ,  Jin-Ho Chun ,  Kwang-Jin Moon ,  Ho-Jin Lee

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20160163590A1

公开(公告)日：2016-06-09

申请号：US14956869

申请日：2015-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deokyoung Jung ,  Seong-Min Son ,  Jin-Ho An ,  Byung-Lyul Park ,  Ji-Soon Park ,  Ho-Jin Lee

IPC: H01L21/768

CPC classification number: H01L21/76898 ,  H01L21/6835 ,  H01L24/03 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68381 ,  H01L2224/03002 ,  H01L2224/034 ,  H01L2224/0557 ,  H01L2224/11002 ,  H01L2224/114 ,  H01L2224/13025 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2224/05599

Abstract: Disclosed is a method of manufacturing a semiconductor device. A preliminary wafer-carrier assembly is formed in such a way that a wafer structure having a plurality of via structures is adhered to a light-penetrating carrier by a photodegradable adhesive. A wafer-carrier assembly having an optical shielding layer for inhibiting or preventing a light penetration is formed such that the wafer structure, the carrier and the adhesive are covered with the optical shielding layer except for the backside of the wafer structure through which the via structures are exposed. An interconnector is formed on the backside of the wafer structure such that the via structures make contact with the interconnector, and the wafer structure and the carrier are separated from each other by irradiating a light to the wafer-carrier assembly. Accordingly, the adhesive is inhibited or prevented from being dissolved during a plasma process on the wafer-carrier assembly.

Abstract translation: 公开了半导体器件的制造方法。 初步的晶片载体组件形成为具有多个通路结构的晶片结构通过可光降解的粘合剂粘附到透光载体上。 形成具有用于抑制或防止光穿透的光学屏蔽层的晶片载体组件，使得晶片结构，载体和粘合剂被除了晶片结构的背面之外的光学屏蔽层覆盖，通过该晶片结构， 被暴露。 在晶片结构的背面形成互连器，使得通孔结构与互连器接触，并且通过向晶片载体组件照射光而使晶片结构和载体彼此分离。 因此，在晶片载体组件的等离子体处理中，粘合剂被抑制或防止溶解。

公开(公告)号：US11469202B2

公开(公告)日：2022-10-11

申请号：US17029639

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min Son ,  Jeong-Gi Jin ,  Jin-Ho An ,  Jin-Ho Chun ,  Kwang-Jin Moon ,  Ho-Jin Lee

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern.