Invention Grant
- Patent Title: Method for forming a metal gate including de-oxidation of an oxidized surface of the metal gate utilizing a reducing agent
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Application No.: US14219039Application Date: 2014-03-19
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Publication No.: US10854472B2Publication Date: 2020-12-01
- Inventor: Huang Liu , Wen-Pin Peng , Jean-Baptiste Laloe
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Williams Morgan, P.C.
- Main IPC: H01L21/312
- IPC: H01L21/312 ; H01L21/321 ; H01L29/66 ; H01L27/092 ; H01L29/417 ; H01L21/8238 ; H01L21/02 ; H01L29/78 ; H01L29/49 ; H01L21/768
Abstract:
Aspects of the present invention relate to approaches for forming a semiconductor device such as a field-effect-transistor (FET) having a metal gate with improved performance. A metal gate is formed on a substrate in the semiconductor device. Further processing can result in unwanted oxidation in the metal that forms the metal gate. A reducing agent can be used to de-oxidize the metal that forms the metal gate, leaving a substantially non-oxidized surface.
Public/Granted literature
- US20150270142A1 DE-OXIDATION OF METAL GATE FOR IMPROVED GATE PERFORMANCE Public/Granted day:2015-09-24
Information query
IPC分类:
