Invention Grant
- Patent Title: Package structure, semiconductor device and method of fabricating the same
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Application No.: US16714824Application Date: 2019-12-16
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Publication No.: US10854569B2Publication Date: 2020-12-01
- Inventor: Wei-Chih Chen , Hung-Jui Kuo , Yu-Hsiang Hu , Sih-Hao Liao , Po-Han Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/04 ; H01L25/11 ; H01L25/07 ; H01L25/075 ; H01L25/065 ; H01L23/538

Abstract:
A package structure including at least one semiconductor die, an insulating encapsulant, an insulating layer, conductive pillars, a dummy pillar, a first seed layer and a redistribution layer is provided. The semiconductor die has a first surface and a second surface opposite to the first surface. The insulating encapsulant is encapsulating the semiconductor die. The insulating layer is disposed on the first surface of the semiconductor die and on the insulating encapsulant. The conductive pillars are located on the semiconductor die. The dummy pillar is located on the insulating encapsulant. The first seed layer is embedded in the insulating layer, wherein the first seed layer is located in between the conductive pillars and the semiconductor die, and located in between the dummy pillar and the insulating encapsulant. The redistribution layer is disposed over the insulating layer and is electrically connected to the semiconductor die through the conductive pillars.
Public/Granted literature
- US20200118960A1 PACKAGE STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2020-04-16
Information query
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