Invention Grant
- Patent Title: Semiconductor device and method of manufacturing thereof
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Application No.: US16447457Application Date: 2019-06-20
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Publication No.: US10854730B2Publication Date: 2020-12-01
- Inventor: Digh Hisamoto , Yoshiyuki Kawashima
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2018-123268 20180628
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L29/66 ; H01L21/762 ; H01L21/311 ; H01L27/11565 ; H01L27/11568 ; H01L21/28
Abstract:
A part of the semiconductor substrate is processed to form fins protruding from the upper surface of the semiconductor substrate. Next, an interlayer insulating film is formed on the semiconductor substrate including the fin FA, and an opening is formed in the interlayer insulating film. Next, a dummy pattern including the dummy material and the insulating film is formed in the opening in a self-aligned manner. Thereafter, the dummy pattern is replaced with a memory gate electrode, a control gate electrode, and the like.
Public/Granted literature
- US20200006526A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF Public/Granted day:2020-01-02
Information query
IPC分类:
