Device for switching between different reading modes of a non-volatile memory and method for reading a non-volatile memory
Abstract:
In one embodiment, a memory device includes a first sense amplifier, a second sense amplifier, a first lower switch arranged between a first lower main bit line and a first input of the first sense amplifier, a second lower switch arranged between the first lower main bit line and a first input of the second sense amplifier, a first upper switch arranged between a first upper main bit line and the first input of the first sense amplifier, a second upper switch arranged between the first upper main bit line and the first input of the second sense amplifier, a third lower switch arranged between a second lower main bit line to a second input of the first sense amplifier, and a third upper switch arranged between a second upper main bit line to a second input of the second sense amplifier.
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