Invention Grant
- Patent Title: Memory including a perovskite material
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Application No.: US16221083Application Date: 2018-12-14
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Publication No.: US10861861B2Publication Date: 2020-12-08
- Inventor: Chia-Ching Lin , Sasikanth Manipatruni , Tanay Gosavi , Dmitri Nikonov , Sou-Chi Chang , Uygar E. Avci , Ian A. Young
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L27/11509
- IPC: H01L27/11509 ; H01L27/11592

Abstract:
An embodiment includes a system comprising: first, second, third, fourth, fifth, and sixth layers, (a) the second, third, fourth, and fifth layers being between the first and sixth layers, and (b) the fourth layer being between the third and fifth layers; a formation between the first and second layers, the formation including: (a) a material that is non-amorphous; and (b) first and second sidewalls; a capacitor between the second and sixth layers, the capacitor including: (a) the third, fourth, and fifth layers, and (b) an electrode that includes the third layer and an additional electrode that includes the fifth layer; and a switching device between the first and sixth layers; wherein: (a) the first layer includes a metal and the sixth layer includes the metal, and (b) the fourth layer includes a Perovskite material. Other embodiments are addressed herein.
Information query
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