Invention Grant
- Patent Title: Semiconductor device with junction termination zone
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Application No.: US16171605Application Date: 2018-10-26
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Publication No.: US10861964B2Publication Date: 2020-12-08
- Inventor: Roland Rupp , Rudolf Elpelt , Reinhold Schoerner , Larissa Wehrhahn-Kilian , Bernd Zippelius
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017125244 20171027
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/06 ; H01L29/16 ; H01L29/861 ; H01L29/10 ; H01L21/308 ; H01L21/04 ; H01L29/417 ; H01L29/739 ; H01L29/808
Abstract:
A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.
Public/Granted literature
- US20190131446A1 Semiconductor Device with Junction Termination Zone Public/Granted day:2019-05-02
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