公开(公告)号：US20240072122A1

公开(公告)日：2024-02-29

申请号：US18364519

申请日：2023-08-03

Applicant: Infineon Technologies AG

Inventor： Michael Hell ,  Rudolf Elpelt ,  Caspar Leendertz ,  Bernd Zippelius ,  Dethard Peters

IPC: H01L29/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/1608 ,  H01L29/0696 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66734 ,  H01L29/7813

Abstract: A semiconductor device includes a transistor including transistor cells. Each transistor cells has a gate electrode arranged in gate trenches formed in a first portion of a silicon carbide substrate and extending in a first horizontal direction, a source region, a channel region, and a current-spreading region. The source region, channel region, and at least part of the current-spreading region are arranged in ridges patterned by the gate trenches. The transistor cells further include a body contact portion of the second conductivity type arranged in a second portion of the silicon carbide substrate and electrically connected to the channel region. The transistor cells further include a shielding region of the second conductivity type. A first portion of the shielding region is arranged below the gate trenches, respectively, and a second portion of the shielding region is arranged adjacent to a sidewall of the gate trenches, respectively.

公开(公告)号：US20190131446A1

公开(公告)日：2019-05-02

申请号：US16171605

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Rudolf Elpelt ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/16 ,  H01L29/861 ,  H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/66 ,  H01L21/04 ,  H01L21/308

Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.

公开(公告)号：US20180158920A1

公开(公告)日：2018-06-07

申请号：US15866755

申请日：2018-01-10

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Dethard Peters ,  Romain Esteve ,  Wolfgang Bergner ,  Thomas Aichinger ,  Daniel Kueck ,  Roland Rupp ,  Bernd Zippelius ,  Karlheinz Feldrapp ,  Christian Strenger

IPC: H01L29/423 ,  H01L29/78 ,  H01L29/739 ,  H01L29/10 ,  H01L29/20 ,  H01L29/04 ,  H01L29/16

CPC classification number: H01L29/4236 ,  H01L29/04 ,  H01L29/045 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/407 ,  H01L29/7397 ,  H01L29/7827

Abstract: A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.

公开(公告)号：US11145755B2

公开(公告)日：2021-10-12

申请号：US16197151

申请日：2018-11-20

Applicant: Infineon Technologies AG

Inventor： Larissa Wehrhahn-Kilian ,  Rudolf Elpelt ,  Roland Rupp ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/16 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/861 ,  H01L29/739 ,  H01L21/04 ,  H01L29/66

Abstract: A semiconductor component includes a SiC semiconductor body having an active region and an edge termination structure at least partly surrounding the active region. A drift zone of a first conductivity type is formed in the SiC semiconductor body. The edge termination structure includes: a first doped region of a second conductivity type between a first surface of the SiC semiconductor body and the drift zone, the first doped region at least partly surrounding the active region and being spaced apart from the first surface; a plurality of second doped regions of the second conductivity type between the first surface and the first doped region; and third doped regions of the first conductivity type separating adjacent second doped regions of the plurality of second doped regions from one another in a lateral direction.

公开(公告)号：US10985248B2

公开(公告)日：2021-04-20

申请号：US16354973

申请日：2019-03-15

Applicant: Infineon Technologies AG

Inventor： Caspar Leendertz ,  Romain Esteve ,  Anton Mauder ,  Andreas Meiser ,  Bernd Zippelius

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/08 ,  H01L29/10

Abstract: Embodiments of SiC devices and corresponding methods of manufacture are provided. In some embodiments, the SiC device has shielding regions at the bottom of some gate trenches and non-linear junctions formed with the SiC material at the bottom of other gate trenches. In other embodiments, the SiC device has the shielding regions at the bottom of the gate trenches and arranged in rows which run in a direction transverse to a lengthwise extension of the trenches. In still other embodiments, the SiC device has the shielding regions and the non-linear junctions, and wherein the shielding regions are arranged in rows which run in a direction transverse to a lengthwise extension of the trenches.

公开(公告)号：US10211306B2

公开(公告)日：2019-02-19

申请号：US15866755

申请日：2018-01-10

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Dethard Peters ,  Romain Esteve ,  Wolfgang Bergner ,  Thomas Aichinger ,  Daniel Kueck ,  Roland Rupp ,  Bernd Zippelius ,  Karlheinz Feldrapp ,  Christian Strenger

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/78 ,  H01L29/739 ,  H01L29/04 ,  H01L29/423 ,  H01L29/40 ,  H01L29/16 ,  H01L29/20

Abstract: A semiconductor device includes a semiconductor body formed from a semiconductor material with a band-gap of at least 2.0 eV, the semiconductor body having a diode region and a source region. The semiconductor device further includes a trench gate structure having a first sidewall and a second sidewall opposite the first sidewall, the first sidewall and the second sidewall extending along a common longitudinal direction. A doping concentration of a first doping type is higher in the diode region than in the source region. The trench gate structure projects from a first surface of the semiconductor body into the semiconductor body. A first portion of the second sidewall at the first surface is directly adjoined by the source region. A second portion of the second sidewall is in direct contact with the diode region. Additional semiconductor device embodiments are provided.

公开(公告)号：US11462611B2

公开(公告)日：2022-10-04

申请号：US17111551

申请日：2020-12-04

Applicant: Infineon Technologies AG

Inventor： Thomas Aichinger ,  Wolfgang Bergner ,  Paul Ellinghaus ,  Rudolf Elpelt ,  Romain Esteve ,  Florian Grasse ,  Caspar Leendertz ,  Shiqin Niu ,  Dethard Peters ,  Ralf Siemieniec ,  Bernd Zippelius

IPC: H01L29/06 ,  H01L21/265 ,  H01L29/16 ,  H01L29/423 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

公开(公告)号：US10861964B2

公开(公告)日：2020-12-08

申请号：US16171605

申请日：2018-10-26

Applicant: Infineon Technologies AG

Inventor： Roland Rupp ,  Rudolf Elpelt ,  Reinhold Schoerner ,  Larissa Wehrhahn-Kilian ,  Bernd Zippelius

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/06 ,  H01L29/16 ,  H01L29/861 ,  H01L29/10 ,  H01L21/308 ,  H01L21/04 ,  H01L29/417 ,  H01L29/739 ,  H01L29/808

Abstract: A semiconductor device includes a drift zone formed in a semiconductor portion. In a transition section of the semiconductor portion a vertical extension of the semiconductor portion decreases from a first vertical extension to a second vertical extension. A junction termination zone of a conductivity type complementary to a conductivity type of the drift zone is formed between a first surface of the semiconductor portion and the drift zone and includes a tapering portion in the transition section. In the tapering portion a vertical extension of the junction termination zone decreases from a maximum vertical extension to zero within a lateral width of at least twice the maximum vertical extension.

公开(公告)号：US20200185297A1

公开(公告)日：2020-06-11

申请号：US16701790

申请日：2019-12-03

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Jochen Hilsenbeck ,  Dethard Peters ,  Paul Salmen ,  Tobias Schmidutz ,  Vice Sodan ,  Christian Stahlhut ,  Juergen Steinbrenner ,  Bernd Zippelius

IPC: H01L23/31 ,  H01L29/417 ,  H01L29/06 ,  H01L29/861 ,  H01L29/78 ,  H01L29/739

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.

公开(公告)号：US11211303B2

公开(公告)日：2021-12-28

申请号：US16701790

申请日：2019-12-03

Applicant: Infineon Technologies AG

Inventor： Jens Peter Konrath ,  Jochen Hilsenbeck ,  Dethard Peters ,  Paul Salmen ,  Tobias Schmidutz ,  Vice Sodan ,  Christian Stahlhut ,  Juergen Steinbrenner ,  Bernd Zippelius

IPC: H01L29/417 ,  H01L23/31 ,  H01L29/06 ,  H01L29/78 ,  H01L29/739 ,  H01L29/861 ,  H01L23/29 ,  H01L29/16

Abstract: An embodiment of a semiconductor device includes a semiconductor body having a first main surface. The semiconductor body includes an active device area and an edge termination area at least partly surrounding the active device area. The semiconductor device further includes a contact electrode on the first main surface and electrically connected to the active device area. The semiconductor device further includes a passivation structure on the edge termination area and laterally extending into the active device area. The semiconductor device further includes an encapsulation structure on the passivation structure and covering a first edge of the passivation structure above the contact electrode.