Invention Grant
- Patent Title: Three-dimensional memory device containing through-memory-level contact via structures and method of making the same
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Application No.: US15950616Application Date: 2018-04-11
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Publication No.: US10892267B2Publication Date: 2021-01-12
- Inventor: Mitsuteru Mushiga , Kenji Sugiura , Hisakazu Otoi , Shigehisa Inoue , Yuki Fukuda
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L27/11524 ; H01L27/11529 ; H01L27/1157 ; H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L27/11573 ; H01L21/28 ; H01L27/11565 ; H01L27/11575 ; H01L21/762 ; H01L27/11519 ; H01L27/11526

Abstract:
A contact via structure vertically extending through an alternating stack of insulating layers and electrically conductive layers is provided in a staircase region having stepped surfaces. The contact via structure is electrically isolated from each electrically conductive layer of the alternating stack except for an electrically conductive layer that directly underlies a horizontal interface of the stepped surfaces. A laterally-protruding portion of the contact via structure contacts an annular top surface of the electrically conductive layer. The electrical isolation can be provided by a ribbed insulating spacer that includes laterally-protruding annular rib regions at levels of the insulating layers, or can be provided by annular insulating spacers located at levels of the electrically conductive layers. The contact via structure can contact a top surface of an underlying metal interconnect structure that overlies a substrate to provide an electrically conductive path.
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