Invention Grant
- Patent Title: Formation of wrap-around-contact to reduce contact resistivity
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Application No.: US16692809Application Date: 2019-11-22
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Publication No.: US10896965B2Publication Date: 2021-01-19
- Inventor: Adra Carr , Jingyun Zhang , Choonghyun Lee , Takashi Ando , Pouya Hashemi
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Daniel P. Morris
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/417 ; H01L21/768 ; H01L21/285 ; H01L29/06 ; H01L29/423 ; H01L29/45
Abstract:
A method of forming a source/drain contact is provided. The method includes forming a sacrificial layer on a source/drain, and depositing an oxidation layer on the sacrificial layer. The method further includes heat treating the oxidation layer and the sacrificial layer to form a modified sacrificial layer. The method further includes forming a protective liner on the modified sacrificial layer, and depositing an interlayer dielectric layer on the protective liner. The method further includes forming a trench in the interlayer dielectric layer that exposes a portion of the protective liner.
Public/Granted literature
- US20200098928A1 FORMATION OF WRAP-AROUND-CONTACT TO REDUCE CONTACT RESISTIVITY Public/Granted day:2020-03-26
Information query
IPC分类:
