Invention Grant
- Patent Title: Method for etching organic region
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Application No.: US16390326Application Date: 2019-04-22
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Publication No.: US10903085B2Publication Date: 2021-01-26
- Inventor: Ryuichi Asako , Masahiro Tabata , Takao Funakubo
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2018-082127 20180423
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01J37/32 ; H01L51/00 ; H01L21/67 ; C23C16/00 ; H01L21/683 ; H01L21/02 ; H01L21/3065
Abstract:
There is provided a method for etching an organic region of a substrate. In the method, an organic film is formed on a surface in a chamber of a plasma processing apparatus. The surface extends out around a region where the substrate is to be disposed in the chamber of the plasma processing apparatus, and the organic region is etched by chemical species from plasma in the chamber.
Public/Granted literature
- US20190326106A1 METHOD FOR ETCHING ORGANIC REGION Public/Granted day:2019-10-24
Information query
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