Invention Grant
- Patent Title: Titanium silicide region forming method
-
Application No.: US15955188Application Date: 2018-04-17
-
Publication No.: US10903086B2Publication Date: 2021-01-26
- Inventor: Hideaki Yamasaki , Kensaku Tanaka , Yuji Kobayashi
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2017-085390 20170424
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/3205 ; C23C16/02 ; C23C16/00 ; H01L21/285 ; C23C16/54 ; C23C16/455 ; C23C16/509 ; C23C16/458 ; H01L21/67 ; H01L21/687

Abstract:
A titanium silicide region forming method includes: performing a pretreatment to expose a clean surface of a silicon layer of a workpiece; forming a titanium-containing region and a titanium silicide region on the silicon layer after performing the pretreatment; and supplying a fluorine-containing gas to the workpiece including the titanium-containing region and the titanium silicide region so as to selectively etch the titanium-containing region with respect to the titanium silicide region.
Public/Granted literature
- US20180308709A1 TITANIUM SILICIDE REGION FORMING METHOD Public/Granted day:2018-10-25
Information query
IPC分类: