Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16681372Application Date: 2019-11-12
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Publication No.: US10921515B2Publication Date: 2021-02-16
- Inventor: Yasutaka Nakashiba , Shinichi Watanuki , Tohru Kawai
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2018-232160 20181212
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/13 ; G02F1/025 ; G02B6/42

Abstract:
A semiconductor device includes a substrate having a first surface and a second surface that have top and back relation, an insulating layer formed on the first surface of the substrate, and an optical waveguide formed on the insulating layer and formed of a semiconducting layer. A first opening is formed on the second surface of the substrate. The first opening overlaps the optical waveguide in plan view.
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