Invention Grant
- Patent Title: Three-dimensional flat NAND memory device having curved memory elements and methods of making the same
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Application No.: US16878865Application Date: 2020-05-20
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Publication No.: US10930674B2Publication Date: 2021-02-23
- Inventor: Zhixin Cui , Masatoshi Nishikawa , Yanli Zhang
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group, PLLC
- Main IPC: H01L27/11582
- IPC: H01L27/11582 ; H01L27/11524 ; H01L27/11556 ; H01L21/764 ; H01L27/1157 ; H01L29/06 ; H01L21/822 ; H01L21/8234 ; H01L21/8239 ; H01L29/66 ; H01L21/28 ; H01L27/11578 ; H01L27/11575 ; H01L27/11519 ; H01L27/11529

Abstract:
A three-dimensional memory device includes alternating stacks of electrically conductive strips and spacer strips located over a substrate and laterally spaced apart among one another by memory stack assemblies. The spacer strips may include air gap strips or insulating strips. Each of the memory stack assemblies includes two two-dimensional arrays of lateral protrusion regions. Each of the lateral protrusion regions comprises a respective curved charge storage element. The charge storage elements may be discrete elements located within a respective lateral protrusion region, or may be a portion of a charge storage material layer that extends vertically over multiple electrically conductive strips. Each of the memory stack assemblies may include two rows of vertical semiconductor channels that laterally overlie a respective vertical stack of charge storage elements.
Public/Granted literature
- US20200286915A1 THREE-DIMENSIONAL FLAT NAND MEMORY DEVICE HAVING CURVED MEMORY ELEMENTS AND METHODS OF MAKING THE SAME Public/Granted day:2020-09-10
Information query
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