Invention Grant
- Patent Title: Memory cells and arrays of elevationally-extending strings of memory cells
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Application No.: US16432250Application Date: 2019-06-05
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Publication No.: US10937482B2Publication Date: 2021-03-02
- Inventor: Ankit Sharma , Haitao Liu , Albert Fayrushin , Akira Goda , Kamal M. Karda
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L27/11556
- IPC: H01L27/11556 ; H01L27/11582 ; H01L29/78 ; H01L29/423 ; H01L29/51 ; G11C11/22 ; H01L27/11502 ; H01L27/105
Abstract:
A memory cell comprises channel material, insulative charge-passage material, programmable material, a control gate, and charge-blocking material between the programmable material and the control gate. The charge-blocking material comprises a non-ferroelectric insulator material and a ferroelectric insulator material comprising hafnium, zirconium, and oxygen. Other embodiments are disclosed.
Public/Granted literature
- US20190311756A1 Memory Cells And Arrays Of Elevationally-Extending Strings Of Memory Cells Public/Granted day:2019-10-10
Information query
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