Invention Grant
- Patent Title: Split gate non-volatile memory cells with FinFET structure and HKMG memory and logic gates, and method of making same
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Application No.: US16208150Application Date: 2018-12-03
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Publication No.: US10937794B2Publication Date: 2021-03-02
- Inventor: Feng Zhou , Jinho Kim , Xian Liu , Serguei Jourba , Catherine Decobert , Nhan Do
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: H01L27/11521
- IPC: H01L27/11521 ; H01L21/28 ; H01L27/11526 ; H01L27/11531 ; H01L29/10 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L29/788
Abstract:
A memory device having plurality of upwardly extending semiconductor substrate fins, a memory cell formed on a first fin and a logic device formed on a second fin. The memory cell includes source and drain regions in the first fin with a channel region therebetween, a polysilicon floating gate extending along a first portion of the channel region including the side and top surfaces of the first fin, a metal select gate extending along a second portion of the channel region including the side and top surfaces of the first fin, a polysilicon control gate extending along the floating gate, and a polysilicon erase gate extending along the source region. The logic device includes source and drain regions in the second fin with a second channel region therebetween, and a metal logic gate extending along the second channel region including the side and top surfaces of the second fin.
Public/Granted literature
Information query
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