Invention Grant
- Patent Title: Nanoporous semiconductor materials
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Application No.: US16127817Application Date: 2018-09-11
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Publication No.: US10943982B2Publication Date: 2021-03-09
- Inventor: Jeffrey C. Grossman , Brendan Derek Smith , Jatin Jayesh Patil , Nicola Ferralis
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- Main IPC: H01L29/32
- IPC: H01L29/32 ; H01L21/308 ; H01L21/306 ; H01L29/16
Abstract:
Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.
Public/Granted literature
- US20190088748A1 NANOPOROUS SEMICONDUCTOR MATERIALS AND MANUFACTURE THEREOF Public/Granted day:2019-03-21
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