公开(公告)号：US20170271459A1

公开(公告)日：2017-09-21

申请号：US15462620

申请日：2017-03-17

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L29/32 ,  H01L21/306 ,  H01L29/16

CPC classification number: H01L29/32 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10 nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

公开(公告)号：US10128341B2

公开(公告)日：2018-11-13

申请号：US15462620

申请日：2017-03-17

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L21/306 ,  H01L29/32 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10 nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

公开(公告)号：US10943982B2

公开(公告)日：2021-03-09

申请号：US16127817

申请日：2018-09-11

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L29/32 ,  H01L21/308 ,  H01L21/306 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

公开(公告)号：US20190088748A1

公开(公告)日：2019-03-21

申请号：US16127817

申请日：2018-09-11

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L29/32 ,  H01L21/308 ,  H01L21/306 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.