公开(公告)号：US20170271459A1

公开(公告)日：2017-09-21

申请号：US15462620

申请日：2017-03-17

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L29/32 ,  H01L21/306 ,  H01L29/16

CPC classification number: H01L29/32 ,  H01L21/30604 ,  H01L21/3081 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10 nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

公开(公告)号：US10943982B2

公开(公告)日：2021-03-09

申请号：US16127817

申请日：2018-09-11

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L29/32 ,  H01L21/308 ,  H01L21/306 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

公开(公告)号：US20190088748A1

公开(公告)日：2019-03-21

申请号：US16127817

申请日：2018-09-11

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L29/32 ,  H01L21/308 ,  H01L21/306 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.

公开(公告)号：US11004943B2

公开(公告)日：2021-05-11

申请号：US16376801

申请日：2019-04-05

Applicant: Massachusetts Institute of Technology

Inventor： Brendan Derek Smith ,  Jeffrey C. Grossman

IPC: H01L29/32 ,  H01L29/24 ,  H01L29/20 ,  H01L29/16 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/324

Abstract: Methods for forming porous or nanoporous semiconductor materials are described. The methods allow for the formation of arrays pores or nanopores in semiconductor materials with advantageous pore size, spacing, pore volume, material thickness, and other aspects. Porous and nanoporous materials also are provided.

公开(公告)号：US20190312112A1

公开(公告)日：2019-10-10

申请号：US16376801

申请日：2019-04-05

Applicant: Massachusetts Institute of Technology

Inventor： Brendan Derek Smith ,  Jeffrey C. Grossman

IPC: H01L29/32 ,  H01L29/24 ,  H01L29/20 ,  H01L29/16 ,  H01L21/308 ,  H01L21/324 ,  H01L21/3065

Abstract: Methods for forming porous or nanoporous semiconductor materials are described. The methods allow for the formation of arrays pores or nanopores in semiconductor materials with advantageous pore size, spacing, pore volume, material thickness, and other aspects. Porous and nanoporous materials also are provided.

公开(公告)号：US10128341B2

公开(公告)日：2018-11-13

申请号：US15462620

申请日：2017-03-17

Applicant: Massachusetts Institute of Technology

Inventor： Jeffrey C. Grossman ,  Brendan Derek Smith ,  Jatin Jayesh Patil ,  Nicola Ferralis

IPC: H01L21/306 ,  H01L29/32 ,  H01L29/16

Abstract: Methods for forming nanoporous semiconductor materials are described. The methods allow for the formation of micron-scale arrays of sub-10 nm nanopores in semiconductor materials with narrow size distributions and aspect ratios of over 400:1.