Invention Grant
- Patent Title: Method of cleaning a substrate processing apparatus and the substrate processing apparatus performing the method
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Application No.: US16526165Application Date: 2019-07-30
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Publication No.: US10944051B2Publication Date: 2021-03-09
- Inventor: Takuya Kubo , Song yun Kang , Keiichi Shimoda , Tetsuya Ohishi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2015-098867 20150514
- Main IPC: B08B5/00
- IPC: B08B5/00 ; C23F1/02 ; H01J37/32 ; C23F1/08 ; H01L43/12 ; G11B5/84 ; H01L21/67 ; H01L21/683 ; G11C11/16 ; H01F10/32 ; H01F41/34 ; H01L21/66 ; H01L27/22 ; H01L43/02 ; H01L43/10
Abstract:
A method of cleaning a substrate processing apparatus that etches a film including a metal includes (a) providing an inert gas, and removing a metal-containing deposition by plasma generated from the inert gas; and (b) after (a), providing a gas containing a fluorine-containing gas and an oxygen-containing gas, and removing a silicon-containing deposition by plasma generated from the gas containing the fluorine-containing gas and the oxygen-containing gas.
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