- 专利标题: Non-planar semiconductor device having doped sub-fin region and method to fabricate same
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申请号: US16812726申请日: 2020-03-09
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公开(公告)号: US10964697B2公开(公告)日: 2021-03-30
- 发明人: Tahir Ghani , Salman Latif , Chanaka D. Munasinghe
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Schwabe, Williamson & Wyatt, P.C.
- 主分类号: H01L27/092
- IPC分类号: H01L27/092 ; H01L21/8238 ; H01L29/66 ; H01L21/225 ; H01L21/265 ; H01L21/3105 ; H01L21/8234 ; H01L27/088 ; H01L29/08
摘要:
Non-planar semiconductor devices having doped sub-fin regions and methods of fabricating non-planar semiconductor devices having doped sub-fin regions are described. For example, a method of fabricating a semiconductor structure involves forming a plurality of semiconductor fins above a semiconductor substrate. A solid state dopant source layer is formed above the semiconductor substrate, conformal with the plurality of semiconductor fins. A dielectric layer is formed above the solid state dopant source layer. The dielectric layer and the solid state dopant source layer are recessed to approximately a same level below a top surface of the plurality of semiconductor fins, exposing protruding portions of each of the plurality of semiconductor fins above sub-fin regions of each of the plurality of semiconductor fins. The method also involves driving dopants from the solid state dopant source layer into the sub-fin regions of each of the plurality of semiconductor fins.