Invention Grant
- Patent Title: Magnetoresistive random access memory having a ring of magnetic tunneling junction region surrounding an array region
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Application No.: US16731064Application Date: 2019-12-31
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Publication No.: US10971676B2Publication Date: 2021-04-06
- Inventor: Chung-Liang Chu , Jian-Cheng Chen , Yu-Ping Wang , Yu-Ruei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201810586453.5 20180608
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; G11C11/16 ; H01L27/02

Abstract:
A semiconductor device includes a substrate having an array region defined thereon, a ring of magnetic tunneling junction (MTJ) region surrounding the array region, wherein the ring of MTJ region comprises a first MTJ, and metal interconnect patterns overlapping part of the ring of MTJ region. Preferably, each of the metal interconnect patterns includes a first metal interconnection connected to the first MTJ directly.
Information query
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