Invention Grant
- Patent Title: Electrically controlled nanomagnet and spin orbit torque magnetic random access memory including the same
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Application No.: US16709965Application Date: 2019-12-11
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Publication No.: US10971677B2Publication Date: 2021-04-06
- Inventor: Hsin Lin , Shih-Yu Wu , Chuang-Han Hsu
- Applicant: Academia Sinica
- Applicant Address: TW Taipei
- Assignee: Academia Sinica
- Current Assignee: Academia Sinica
- Current Assignee Address: TW Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L43/04
- IPC: H01L43/04 ; H01L43/06 ; H01L27/22

Abstract:
An electrically controlled nanomagnet and a spin orbit torque magnetic random access memory (SOT-MRAM) including the same are provided. The electrically controlled nanomagnet includes: a first spin-Hall material layer including a first spin-Hall material; a second spin-Hall material layer including a second spin-Hall material; and a first magnetic layer disposed between the first spin-Hall material layer and the second spin-Hall material layer, wherein the first spin-Hall material and the second spin-Hall material are substantially mirror image to each other.
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