公开(公告)号：US20230409951A1

公开(公告)日：2023-12-21

申请号：US18250648

申请日：2021-11-23

Applicant: Northeastern University ,  Academia Sinica ,  Temple University-Of The Commonwealth System Of Higher Education

Inventor： Jeng-Yuan Tsai ,  Jinbo Pan ,  Hsin Lin ,  Arun Bansil ,  Qimin Yan

IPC: G06N10/40 ,  G06N10/20 ,  H01L29/66

CPC classification number: G06N10/40 ,  G06N10/20 ,  H01L29/66977 ,  H01L29/66984

Abstract: Anion antisite defects in monolayer Transition Metal Dichalcogenide (TMD) systems are here identified as two-dimen-sional solid-state defect qubits. The proposed antisites in these TMDs host paramagnetic triplet ground states with flexible level splitting. A viable transition loop between the triplet and singlet defect states is demonstrated, including optical excitations/relaxations and nonradiative decay paths for the antisites as qubits. A complete set of qubit operational processes, including initialization, manipulation, and readout, is delineated.

公开(公告)号：US10971677B2

公开(公告)日：2021-04-06

申请号：US16709965

申请日：2019-12-11

Applicant: Academia Sinica

Inventor： Hsin Lin ,  Shih-Yu Wu ,  Chuang-Han Hsu

IPC: H01L43/04 ,  H01L43/06 ,  H01L27/22

Abstract: An electrically controlled nanomagnet and a spin orbit torque magnetic random access memory (SOT-MRAM) including the same are provided. The electrically controlled nanomagnet includes: a first spin-Hall material layer including a first spin-Hall material; a second spin-Hall material layer including a second spin-Hall material; and a first magnetic layer disposed between the first spin-Hall material layer and the second spin-Hall material layer, wherein the first spin-Hall material and the second spin-Hall material are substantially mirror image to each other.