Invention Grant
- Patent Title: In-situ tungsten deposition without barrier layer
-
Application No.: US16835279Application Date: 2020-03-30
-
Publication No.: US10991586B2Publication Date: 2021-04-27
- Inventor: Yong Wu , Wei V. Tang , Jianqiu Guo , Wenyi Liu , Yixiong Yang , Jacqueline S. Wrench , Mandyam Sriram , Srinivas Gandikota , Yumin He
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/768 ; H01L21/3205 ; H01L21/02
Abstract:
In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.
Public/Granted literature
- US20200243341A1 IN-SITU TUNGSTEN DEPOSITION WITHOUT BARRIER LAYER Public/Granted day:2020-07-30
Information query
IPC分类:
