公开(公告)号：US10991586B2

公开(公告)日：2021-04-27

申请号：US16835279

申请日：2020-03-30

申请人： Applied Materials, Inc.

发明人： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/3205 ,  H01L21/02

摘要： In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.

公开(公告)号：US20200243341A1

公开(公告)日：2020-07-30

申请号：US16835279

申请日：2020-03-30

申请人： Applied Materials, Inc.

发明人： Yong Wu ,  Wei V. Tang ,  Jianqiu Guo ,  Wenyi Liu ,  Yixiong Yang ,  Jacqueline S. Wrench ,  Mandyam Sriram ,  Srinivas Gandikota ,  Yumin He

IPC分类号： H01L21/285 ,  H01L21/02 ,  H01L21/768 ,  H01L21/3205

摘要： In-situ methods for depositing a metal film without the use of a barrier layer are disclosed. Some embodiments comprise forming an amorphous nucleation layer comprising one or more of silicon or boron and forming a metal layer on the nucleation layer. These processes are performed without an air break between processes.