Invention Grant
- Patent Title: Bit line voltage control for damping memory programming
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Application No.: US16829692Application Date: 2020-03-25
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Publication No.: US11011242B2Publication Date: 2021-05-18
- Inventor: Xiang Yang , Deepanshu Dutta , Gerrit Jan Hemink , Tai-Yuan Tseng , Yan Li
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/34
- IPC: G11C16/34 ; G11C16/10 ; G11C16/26 ; G11C16/24 ; G11C16/04 ; G11C11/56

Abstract:
An apparatus includes a programming circuit configured to supply a program pulse to increase a threshold voltage of a memory cell. The apparatus also includes a sensing circuit configured to determine that the threshold voltage of the memory cell satisfies a trigger threshold voltage in response to the program pulse. The apparatus further includes a damping circuit configured to increase a voltage of a bit line connected to the memory cell after initiation of and during a second program pulse in response to the threshold voltage of the memory cell satisfying the trigger threshold voltage, the second program pulse being sent by the programming circuit.
Public/Granted literature
- US20200227125A1 BIT LINE VOLTAGE CONTROL FOR DAMPING MEMORY PROGRAMMING Public/Granted day:2020-07-16
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