Invention Grant
- Patent Title: SRAM-based authentication circuit
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Application No.: US15259948Application Date: 2016-09-08
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Publication No.: US11012246B2Publication Date: 2021-05-18
- Inventor: Shih-Lien Linus Lu , Wei-Min Chan , Chien-Chen Lin
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H04L9/32
- IPC: H04L9/32 ; G11C7/20 ; G11C8/12 ; H04L9/08 ; G06F12/14 ; G11C11/417 ; G11C29/14 ; G11C16/34 ; G11C29/44

Abstract:
A memory device includes a memory block comprises a plurality of bits, wherein at least a first bit of the plurality of bits presents an initial logic state each time it is powered on; a start-up circuit configured to power on and off the memory block N times, where N is an odd integer greater than 1, and wherein the at least first bit presents an initial state after each respective power cycle of the memory block; and an authentication circuit, coupled to the memory block, and comprising an election engine that is configured to elect an initial state that occurs (N+1)/2 or more times after N power cycles that are performed by the start-up circuit, as a majority initial logic state for the first bit.
Public/Granted literature
- US20180069711A1 SRAM-BASED AUTHENTICATION CIRCUIT Public/Granted day:2018-03-08
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