Invention Grant
- Patent Title: Metal-base substrate and semiconductor device
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Application No.: US16573402Application Date: 2019-09-17
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Publication No.: US11018288B2Publication Date: 2021-05-25
- Inventor: Tomohiro Ikeda , Masaaki Katsumata , Yohei Inayoshi , Yosuke Nakayama , Yumiko Kameshima
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Global IP Counselors, LLP
- Priority: JP2016-192188 20160929
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L33/64 ; H01L25/075 ; H05K3/00 ; H05K1/18 ; H01L33/62

Abstract:
A metal-base substrate includes a metal plate, an adhesive layer; and a film substrate. The adhesive layer is interposed between the metal plate and the film substrate. The film substrate has a wiring layer on a first surface opposite to a second surface on which the adhesive layer is arranged, with a through hole piercing through the film substrate in a thickness direction of the film substrate.
Public/Granted literature
- US20200013937A1 METAL-BASE SUBSTRATE AND SEMICONDUCTOR DEVICE Public/Granted day:2020-01-09
Information query
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