- 专利标题： Non-self aligned contact semiconductor devices
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申请号： US16351999申请日： 2019-03-13
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公开(公告)号： US11024720B2公开(公告)日： 2021-06-01
- 发明人: Ruilong Xie , Hari Prasad Amanapu , Kangguo Cheng , Chanro Park
- 申请人： International Business Machines Corporation
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Amin, Turocy & Watson, LLP
- 主分类号： H01L29/45
- IPC分类号： H01L29/45 ; H01L29/40 ; H01L21/3105 ; H01L29/423 ; H01L29/417 ; H01L29/78
摘要：
Techniques regarding non-SAC semiconductor devices are provided. For example, one or more embodiments described herein can comprise an apparatus, which can further comprise a gate positioned adjacent a channel region of a semiconductor body for a field effect transistor. The gate can comprise a metal liner, and wherein the metal liner is an interface between a first metal layer of the gate and a second metal layer of the gate.
公开/授权文献
- US20200295151A1 NON-SELF ALIGNED CONTACT SEMICONDUCTOR DEVICES 公开/授权日：2020-09-17
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