A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A MTJ film stack is deposited on a bottom electrode on a substrate. The MTJ film stack is first ion beam etched (IBE) using a first angle and a first energy to form a MTJ device wherein conductive re-deposition forms on sidewalls of the MTJ device. Thereafter, the conductive re-deposition is oxidized. Thereafter, the MTJ device is second ion beam etched (IBE) at a second angle and a second energy to remove oxidized re-deposition.