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公开(公告)号：US20230217834A1
公开(公告)日：2023-07-06
申请号：US18119959
申请日：2023-03-10
发明人： Vignesh Sundar , Yi Yang , Dongna Shen , Zhongjian Teng , Jesmin Haq , Sahil Patel , Yu-Jen Wang , Tom Zhong
摘要： A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.
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2.发明授权公开(公告)号：US11289645B2
公开(公告)日：2022-03-29
申请号：US16236705
申请日：2018-12-31
发明人： Yi Yang , Vignesh Sundar , Dongna Shen , Sahil Patel , Ru-Ying Tong , Yu-Jen Wang
摘要： A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.
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公开(公告)号：US20190064661A1
公开(公告)日：2019-02-28
申请号：US15685240
申请日：2017-08-24
发明人： Yi Yang , Dongna Shen , Jesmin Haq , Yu-Jen Wang
CPC分类号： G03F7/0048 , H01J37/32082
摘要： A process flow for shrinking a critical dimension (CD) in photoresist features and reducing CD non-uniformity across a wafer is disclosed. A photoresist pattern is treated with halogen plasma to form a passivation layer with thickness (t1) on feature sidewalls, and thickness (t2) on the photoresist top surface where t2>t1. Thereafter, an etch based on O2, or O2 with a fluorocarbon or halogen removes the passivation layer and shrinks the CD. The passivation layer slows the etch such that photoresist thickness is maintained while CD shrinks to a greater extent for features having a width (d1) than on features having width (d2) where d1>d2. Accordingly, CD non-uniformity is reduced from 2.3% to 1% when d2 is 70 nm and is shrunk to 44 nm after the aforementioned etch. After a second etch through a MTJ stack to form MTJ cells, CD non-uniformity is maintained at 1%.
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公开(公告)号：US11043632B2
公开(公告)日：2021-06-22
申请号：US16573087
申请日：2019-09-17
发明人： Vignesh Sundar , Guenole Jan , Dongna Shen , Yi Yang , Yu-Jen Wang
摘要： A first pattern is formed on an MTJ stack as a first array of first parallel bands. A first ion beam etching is performed on the MTJ stack using the first pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the first parallel bands and the substrate is not rotated. Thereafter, a second pattern is formed on the MTJ stack as a second array of parallel bands wherein the second parallel bands are perpendicular to the first parallel bands. A second ion beam etching is performed using the second pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the second parallel bands and wherein the substrate is not rotated to complete formation of the MTJ structure.
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公开(公告)号：US20210135097A1
公开(公告)日：2021-05-06
申请号：US16672981
申请日：2019-11-04
发明人： Dongna Shen , Yi Yang , Sahil Patel , Vignesh Sundar , Yu-Jen Wang
摘要： A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A MTJ film stack is deposited on a bottom electrode on a substrate. The MTJ film stack is first ion beam etched (IBE) using a first angle and a first energy to form a MTJ device wherein conductive re-deposition forms on sidewalls of the MTJ device. Thereafter, the conductive re-deposition is oxidized. Thereafter, the MTJ device is second ion beam etched (IBE) at a second angle and a second energy to remove oxidized re-deposition.
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公开(公告)号：US20210083180A1
公开(公告)日：2021-03-18
申请号：US16573087
申请日：2019-09-17
发明人： Vignesh Sundar , Guenole Jan , Dongna Shen , Yi Yang , Yu-Jen Wang
摘要： A first pattern is formed on an MTJ stack as a first array of first parallel bands. A first ion beam etching is performed on the MTJ stack using the first pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the first parallel bands and the substrate is not rotated. Thereafter, a second pattern is formed on the MTJ stack as a second array of parallel bands wherein the second parallel bands are perpendicular to the first parallel bands. A second ion beam etching is performed using the second pattern wherein a tilt between an ion beam source and the substrate is maintained such that a horizontal component of the ion beam is parallel to the second parallel bands and wherein the substrate is not rotated to complete formation of the MTJ structure.
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公开(公告)号：US10756137B2
公开(公告)日：2020-08-25
申请号：US16215094
申请日：2018-12-10
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A MTJ stack comprising at least a pinned layer, a barrier layer, and a free layer is deposited on a bottom electrode. A top electrode layer, a carbon-based hard mask, and a dielectric hard mask are deposited in order on the MTJ stack. First, the hard masks and MTJ stack are etched. The etched MTJ stack has a first width. During the first etching, chemical damage forms on sidewalls of the MTJ stack. Next, the carbon-based hard mask is trimmed to a second width smaller than the first width. Then in a second etching, the top electrode and free layer of said MTJ stack not covered by the trimmed carbon-based hard mask are etched to complete formation of the MTJ structure wherein during the second etching of the free layer, chemical damage is removed from the free layer and metal re-deposition is formed on sidewalls of the free layer.
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公开(公告)号：US20200212298A1
公开(公告)日：2020-07-02
申请号：US16236740
申请日：2018-12-31
发明人： Yi Yang , Guenole Jan , Yu-Jen Wang
摘要： A MTJ stack is deposited on a bottom electrode, the stack comprising at least a pinned layer, a barrier layer, a free layer, and a top electrode layer. The top electrode and MTJ stack are etched where not covered by a photoresist pattern to form an MTJ structure. A conformal encapsulation dielectric is deposited over the MTJ structure. A magnetic metal layer is deposited on the encapsulation dielectric and anisotropically etched leaving a magnetic metal shield on sidewalls of the MTJ structure. A dielectric layer is deposited over the magnetic metal shield and MTJ structure. The dielectric layer and encapsulation dielectric are polished away to expose the top electrode. A top metal contact layer is deposited contacting the top electrode and the magnetic metal shield wherein the magnetic metal shield has no contact with said bottom electrode and MTJ structure but is separated from them by the encapsulation dielectric.
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9.发明申请公开(公告)号：US20200212297A1
公开(公告)日：2020-07-02
申请号：US16236705
申请日：2018-12-31
发明人： Yi Yang , Vignesh Sundar , Dongna Shen , Sahil Patel , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L43/12
摘要： A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.
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10.发明申请公开(公告)号：US20200185454A1
公开(公告)日：2020-06-11
申请号：US16215094
申请日：2018-12-10
发明人： Yi Yang , Dongna Shen , Yu-Jen Wang
摘要： A MTJ stack comprising at least a pinned layer, a barrier layer, and a free layer is deposited on a bottom electrode. A top electrode layer, a carbon-based hard mask, and a dielectric hard mask are deposited in order on the MTJ stack. First, the hard masks and MTJ stack are etched. The etched MTJ stack has a first width. During the first etching, chemical damage forms on sidewalls of the MTJ stack. Next, the carbon-based hard mask is trimmed to a second width smaller than the first width. Then in a second etching, the top electrode and free layer of said MTJ stack not covered by the trimmed carbon-based hard mask are etched to complete formation of the MTJ structure wherein during the second etching of the free layer, chemical damage is removed from the free layer and metal re-deposition is formed on sidewalls of the free layer.
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