- 专利标题: Non-volatile memory devices and systems with volatile memory features and methods for operating the same
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申请号: US15959868申请日: 2018-04-23
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公开(公告)号: US11049565B2公开(公告)日: 2021-06-29
- 发明人: Timothy B. Cowles , George B. Raad , James S. Rehmeyer , Jonathan S. Parry
- 申请人: Micron Technology, Inc.
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Perkins Coie LLP
- 主分类号: G11C16/14
- IPC分类号: G11C16/14 ; G11C16/30 ; G11C17/16 ; G11C17/18 ; G11C16/22 ; G11C13/00 ; G11C11/16 ; G11C11/22 ; G11C16/08
摘要:
Memory devices, systems including memory devices, and methods of operating memory devices and systems are provided, in which at least a subset of a non-volatile memory array is configured to behave as a volatile memory by erasing or degrading data in the event of a changed power condition such as a power-loss event, a power-off event, or a power-on event. In one embodiment of the present technology, a memory device is provided, comprising a non-volatile memory array, and circuitry configured to store one or more addresses of the non-volatile memory array, to detect a changed power condition of the memory device, and to erase or degrade data at the one or more addresses in response to detecting the changed power condition.
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