Invention Grant
- Patent Title: Self-aligned gate contact integration with metal resistor
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Application No.: US16366309Application Date: 2019-03-27
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Publication No.: US11056537B2Publication Date: 2021-07-06
- Inventor: Xin Miao , Richard A. Conti , Ruilong Xie , Kangguo Cheng
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Erik Johnson
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L27/24 ; H01L45/00 ; H01L21/285 ; H01L29/66 ; H01L29/45 ; H01L21/768
Abstract:
A middle-of-line (MOL) structure is provided and includes device and resistive memory (RM) regions. The device region includes trench silicide (TS) metallization, a first interlayer dielectric (ILD) portion and a first dielectric cap portion disposed over the TS metallization and the first ILD portion. The RM region includes a second dielectric cap portion, a second ILD portion and an RM resistor interposed between the second dielectric cap portion and the second ILD portion.
Public/Granted literature
- US20200312909A1 SELF-ALIGNED GATE CONTACT INTEGRATION WITH METAL RESISTOR Public/Granted day:2020-10-01
Information query
IPC分类:
