Invention Grant
- Patent Title: Method for manufacturing a semiconductor device and film deposition apparatus
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Application No.: US16196111Application Date: 2018-11-20
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Publication No.: US11075076B2Publication Date: 2021-07-27
- Inventor: Takahito Umehara , Masato Koakutsu
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JPJP2017-232122 20171201,JPJP2018-069515 20180330
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/02 ; H01L21/321 ; H01L21/225 ; H01L21/687 ; C23C16/52 ; H01L27/11582 ; C23C16/40 ; C23C16/06 ; C23C16/455 ; H01L27/1157
Abstract:
A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.
Public/Granted literature
- US20190172707A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND FILM DEPOSITION APPARATUS Public/Granted day:2019-06-06
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