Invention Grant
- Patent Title: Metal gate fill for short-channel and long-channel semiconductor devices
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Application No.: US15909815Application Date: 2018-03-01
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Publication No.: US11075275B2Publication Date: 2021-07-27
- Inventor: Shih-Hang Chiu , Chung-Chiang Wu , Ching-Hwanq Su , Da-Yuan Lee , Ji-Cheng Chen , Kuan-Ting Liu , Tai-Wei Hwang , Chung-Yi Su
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L27/088 ; H01L21/3213 ; H01L21/28 ; H01L21/285 ; H01L29/51 ; H01L21/8234
Abstract:
Certain embodiments of a semiconductor device and a method of forming a semiconductor device comprise forming a high-k gate dielectric layer over a short channel semiconductor fin. A work function metal layer is formed over the high-k gate dielectric layer. A seamless metal fill layer is conformally formed over the work function metal layer.
Public/Granted literature
- US20190273145A1 Metal Gate Fill for Semiconductor Devices Public/Granted day:2019-09-05
Information query
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