Invention Grant
- Patent Title: Power transistor leakage current with gate voltage less than threshold
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Application No.: US16226318Application Date: 2018-12-19
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Publication No.: US11085961B2Publication Date: 2021-08-10
- Inventor: Robert Allan Neidorff , Henry Litzmann Edwards
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Lawrence J. Bassuk; Charles A. Brill; Frank D. Cimino
- Main IPC: G01R31/26
- IPC: G01R31/26 ; G01R31/30 ; G01R19/00 ; G01R19/165 ; G01R31/50

Abstract:
An example method provides a power MOSFET, a voltage source coupled to the power MOSFET, and a current measurement device coupled to a first non-control terminal of the power MOSFET. The voltage source, the current measurement device, and a second non-control terminal of the power MOSFET couple to ground. The method uses the voltage source to apply a voltage between a gate terminal and the second non-control terminal of the power MOSFET, the voltage greater than zero volts and less than a threshold voltage of the power MOSFET. The method also uses the current measurement device to measure a first current flowing through the first non-control terminal while applying the voltage. The method further uses the first current to predict a second current through the first non-control terminal for a voltage between the gate terminal and the second non-control terminal that is approximately zero.
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