公开(公告)号：US20240387757A1

公开(公告)日：2024-11-21

申请号：US18785045

申请日：2024-07-26

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232 ,  G01J1/02 ,  G01J1/04 ,  G01J1/42 ,  H01L25/16 ,  H01L31/103

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

公开(公告)号：US20240290844A1

公开(公告)日：2024-08-29

申请号：US18652020

申请日：2024-05-01

Applicant: Texas Instruments Incorporated

Inventor： Mahalingam Nandakumar ,  Alexei Sadovnikov ,  Henry Litzmann Edwards ,  Jarvis Benjamin Jacobs

IPC: H01L29/26 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/26 ,  H01L21/823892 ,  H01L27/092 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

Abstract: A semiconductor device including drain extended metal oxide semiconductor field effect transistor (MOSFET) includes a source region and a drain region each having a first dopant type spaced apart along a surface of a semiconductor material having a second opposite conductivity type. A gate electrode over the semiconductor material surface between the source region and the drain region. A diffusion suppression implant region in the semiconductor material extends from the source region under the gate electrode. The diffusion suppression implant region includes a body region having the second opposite conductivity type and comprises at least one of carbon, nitrogen, and fluorine.

公开(公告)号：US20240258175A1

公开(公告)日：2024-08-01

申请号：US18632439

申请日：2024-04-11

Applicant: Texas Instruments Incorporated

Inventor： Abbas Ali ,  Christopher Scott Whitesell ,  John Christopher Shriner ,  Henry Litzmann Edwards

IPC: H01L21/8234 ,  H01L27/088

CPC classification number: H01L21/823462 ,  H01L27/088

Abstract: A method of fabricating an integrated circuit includes forming a first opening having a first width and a second opening having a second width in a first dielectric layer over a silicon substrate. The openings expose the silicon substrate and the exposed silicon substrate is oxidized to form first and second LOCOS structures having a first thickness. A polysilicon layer is formed over the silicon substrate, so that the polysilicon layer fills the first and second openings. A blanket etch of the polysilicon layer is performed to remove at least a portion of the polysilicon layer over the second LOCOS structure while leaving the first LOCOS structure protected by the polysilicon layer. The silicon substrate under the second LOCOS structure is further oxidized such that the second LOCOS structure has a second thickness greater than the first thickness.

公开(公告)号：US11557673B2

公开(公告)日：2023-01-17

申请号：US17136816

申请日：2020-12-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Christopher Boguslaw Kocon ,  Henry Litzmann Edwards

IPC: H01L29/78 ,  H01L29/40 ,  H01L29/417 ,  H01L29/45 ,  H01L29/16 ,  H01L29/20 ,  H01L29/66 ,  H01L29/06

Abstract: A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.

公开(公告)号：US11444075B2

公开(公告)日：2022-09-13

申请号：US16666563

申请日：2019-10-29

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Henry Litzmann Edwards ,  Akram A. Salman ,  Binghua Hu

IPC: H01L27/02 ,  H01L29/10 ,  H01L29/06 ,  H01L21/265 ,  H01L21/763 ,  H01L21/762 ,  H01L21/8222 ,  H01L27/06

Abstract: An integrated circuit (IC) includes a semiconductor substrate in which a plurality of spaced-apart deep trench (DT) structures are formed. The IC further includes a plurality of DEEPN diffusion regions, each DEEPN diffusion region surrounding a corresponding one of the DT structures. Each of the DEEPN diffusion regions merges with at least one neighboring DEEPN diffusion region that surrounds at least one neighboring DT structure. The merged DEEPN diffusion regions may partially isolate two electronic devices, e.g. ESD devices.

公开(公告)号：US11387333B2

公开(公告)日：2022-07-12

申请号：US16704833

申请日：2019-12-05

Applicant: Texas Instruments Incorporated

Inventor： Henry Litzmann Edwards

IPC: H01L29/40 ,  H01L27/088 ,  H01L23/528 ,  H01L29/78 ,  H01L29/423 ,  H01L21/8234 ,  H01L21/02 ,  H01L29/66 ,  H01L21/762 ,  H01L29/861

Abstract: An integrated circuit (IC) includes a first field-plated field effect transistor (FET), and a second field-plated FET, and functional circuitry configured together with the field-plated FETs for realizing at least one circuit function in a semiconductor surface layer on a substrate. The field-plated FETs include a gate structure including a gate electrode partially over a LOCOS field relief oxide and partially over a gate dielectric layer. The LOCOS field relief oxide thickness for the first field-plated FET is thicker than the LOCOS field relief oxide thickness for the second field-plated FET. There are sources and drains on respective sides of the gate structures in the semiconductor surface layer.

公开(公告)号：US20220189949A1

公开(公告)日：2022-06-16

申请号：US17684774

申请日：2022-03-02

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Robert M. Higgins ,  Henry Litzmann Edwards ,  Xiaoju Wu ,  Shariq Arshad ,  Li Wang ,  Jonathan Philip Davis ,  Tathagata Chatterjee

IPC: H01L27/06 ,  H01L29/06 ,  H01L21/8234 ,  H01L49/02 ,  H01L21/762 ,  G06F30/392

Abstract: The present disclosure introduces, among other things, an electronic device, e.g. an integrated circuit (IC). The IC includes a semiconductor substrate comprising a first doped layer of a first conductivity type. A second doped layer of the first conductivity type is located within the first doped layer. The second doped layer has first and second layer portions with a greater dopant concentration than the first doped layer, with the first layer portion being spaced apart from the second layer portion laterally with respect to a surface of the substrate. The IC further includes a lightly doped portion of the first doped layer, the lightly doped portion being located between the first and second layer portions. A dielectric isolation structure is located between the first and second layer portions, and directly contacts the lightly doped portion.

公开(公告)号：US20220102609A1

公开(公告)日：2022-03-31

申请号：US17550067

申请日：2021-12-14

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Barry Jon Male ,  Henry Litzmann Edwards

IPC: H01L35/30 ,  H01L35/32 ,  H03K17/605 ,  H03K17/567 ,  H03K17/689 ,  H01L27/16

Abstract: A system on an integrated circuit (IC) chip includes an input terminal and a return terminal, a heater, a thermopile, and a switch device. The heater is coupled between the input terminal and the return terminal. The thermopile is spaced apart from the heater by a galvanic isolation region. The switch device includes a control input coupled to an output of the thermopile. The switch device is coupled to at least one output terminal of the IC chip.

公开(公告)号：US20210343884A1

公开(公告)日：2021-11-04

申请号：US17377052

申请日：2021-07-15

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232 ,  H01L25/16 ,  G01J1/02 ,  H01L31/103 ,  G01J1/04 ,  G01J1/42

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.

公开(公告)号：US11094837B2

公开(公告)日：2021-08-17

申请号：US16212870

申请日：2018-12-07

Applicant: Texas Instruments Incorporated

Inventor： Debarshi Basu ,  Henry Litzmann Edwards ,  Ricky A. Jackson ,  Marco A. Gardner

IPC: H01L31/0232 ,  H01L25/16 ,  G01J1/02 ,  H01L31/103 ,  G01J1/04 ,  G01J1/42

Abstract: An integrated circuit that includes a substrate, a photodiode, and a Fresnel structure. The photodiode is formed on the substrate, and it has a p-n junction. The Fresnel structure is formed above the photodiode, and it defines a focal zone that is positioned within a proximity of the p-n junction. In one aspect, the Fresnel structure may include a trench pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In another aspect, the Fresnel structure may include a wiring pattern that functions as a diffraction means for redirecting and concentrating incident photons to the focal zone. In yet another aspect, the Fresnel structure may include a transparent dielectric pattern that functions as a refractive means for redirecting and concentrating incident photons to the focal zone.