A semiconductor storage device according to the present embodiment includes a plurality of first wires provided above a surface of a semiconductor substrate to extend in a first direction, and a plurality of second wires provided above the first wires to extend in a second direction crossing the first direction. A plurality of capacitor elements are arranged every other intersection region among intersection regions between the first wires and the second wires as viewed from above the surface of the semiconductor substrate. A plurality of transistors are provided above the capacitor elements to correspond thereto, respectively. A first distance between two of the capacitor elements, which are adjacent to each other in the first direction, is narrower than a second distance between two of the capacitor elements, which are adjacent to each other in the second direction.