Solid-state lighting devices including light-emitting diodes (LEDs) and more particularly LED chip structures are disclosed. LED chip structures are disclosed that include reduced bonding topography between active LED structures and carrier submounts. For certain LED chip structures, active LED structures are formed on a growth substrate and subsequently bonded to a carrier substrate. Bonding between active LED structures and carrier submounts is typically provided by metal bonding materials. By providing reduced bonding topography between active LED structures and carrier submounts, bonding strength of metal bonding materials may be improved. Electrical connection configurations for certain layers of active LED structures are disclosed that promote reduced bonding topography. Peripheral border configurations of carrier submounts are also disclosed with that promote reduced bonding topography along the peripheral borders.