Invention Grant
- Patent Title: Magnetoresistive random access memory and method for fabricating the same
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Application No.: US16708389Application Date: 2019-12-09
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Publication No.: US11114612B2Publication Date: 2021-09-07
- Inventor: Da-Jun Lin , Bin-Siang Tsai , Shih-Wei Su , Ting-An Chien
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW108140832 20191111
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L43/12 ; G11C11/16 ; H01L27/22 ; H01F10/32 ; H01F41/34 ; H01L43/10
Abstract:
A method for fabricating semiconductor device includes the steps of first forming a magnetic tunneling junction (MTJ) stack on a substrate, in which the MTJ stack includes a pinned layer on the substrate, a barrier layer on the pinned layer, and a free layer on the barrier layer. Next, part of the MTJ stack is removed, a first cap layer is formed on a sidewall of the MTJ stack, and the first cap layer and the MTJ stack are removed to form a first MTJ and a second MTJ.
Public/Granted literature
- US20210143324A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2021-05-13
Information query
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