Invention Grant
- Patent Title: Emitter structures for ultra-small vertical cavity surface emitting lasers (VCSELS) and arrays incorporating the same
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Application No.: US16693666Application Date: 2019-11-25
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Publication No.: US11125862B2Publication Date: 2021-09-21
- Inventor: Scott Burroughs , Brent Fisher , James Carter
- Applicant: Sense Photonics, Inc.
- Applicant Address: US NC Durham
- Assignee: Sense Photonics, Inc.
- Current Assignee: Sense Photonics, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/30 ; H01S5/00 ; G01S17/02 ; G01S17/89 ; H01S5/042 ; H01S5/40 ; G02B26/10 ; H01S5/42 ; H01L31/167 ; G02B5/08 ; H01L25/00 ; H01S3/02 ; G01S7/481 ; H01S5/026 ; H01S5/02253 ; F21V5/04 ; H01S5/062 ; G01J1/44 ; H01L31/18 ; G02B3/00 ; H01S5/12 ; H01S5/02 ; H01S5/02255
Abstract:
A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
Public/Granted literature
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