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公开(公告)号:US12123769B2
公开(公告)日:2024-10-22
申请号:US17412739
申请日:2021-08-26
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter
IPC: G01J1/44 , F21V5/04 , G01S7/481 , G01S17/02 , G01S17/89 , G01S17/894 , G02B5/08 , G02B26/10 , H01L25/00 , H01L31/167 , H01L31/18 , H01S3/02 , H01S5/00 , H01S5/02253 , H01S5/02375 , H01S5/026 , H01S5/042 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/30 , H01S5/40 , H01S5/42 , G02B3/00 , H01S5/02 , H01S5/02255
CPC classification number: G01J1/44 , F21V5/041 , F21V5/045 , G01S7/4815 , G01S17/02 , G01S17/89 , G01S17/894 , G02B5/0883 , G02B26/10 , H01L25/50 , H01L31/167 , H01L31/18 , H01S3/025 , H01S5/0028 , H01S5/0071 , H01S5/02253 , H01S5/02375 , H01S5/026 , H01S5/0262 , H01S5/04254 , H01S5/062 , H01S5/12 , H01S5/183 , H01S5/18394 , H01S5/18397 , H01S5/30 , H01S5/40 , H01S5/4025 , H01S5/4037 , H01S5/4075 , H01S5/423 , G01J2001/448 , G02B3/0006 , H01S5/0216 , H01S5/0217 , H01S5/02255 , H01S5/04257
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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公开(公告)号:US11467286B2
公开(公告)日:2022-10-11
申请号:US16273783
申请日:2019-02-12
Applicant: Sense Photonics, Inc.
Inventor: Hod Finkelstein , Brent Fisher , Scott Burroughs , Russell Kanjorski
IPC: G01S17/00 , G01S17/89 , G01S7/4863 , G01S7/4865 , G01S17/10 , G01S7/487 , H04N5/335 , G01S7/481 , G01S17/931
Abstract: A Light Detection And Ranging (LIDAR) apparatus includes a pulsed light source to emit optical signals, a detector array comprising single-photon detectors to output respective detection signals indicating times of arrival of a plurality of photons incident thereon, and processing circuitry to receive the respective detection signals. The processing circuitry includes one or more of a recharge circuit configured to activate and deactivate subsets of the single photon detectors for respective strobe windows between pulses of the optical signals and at differing delays, a correlator circuit configured to output respective correlation signals representing detection of one or more of the photons having times of arrival within a predetermined correlation time relative to one another, and a time processing circuit comprising a counter circuit configured to increment a count value and a time integrator circuit configured to generate an integrated time value based on the respective correlation signals or detection signals.
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公开(公告)号:US20210396851A1
公开(公告)日:2021-12-23
申请号:US17412739
申请日:2021-08-26
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , H01S5/042 , H01S5/02253 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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公开(公告)号:US20210356564A1
公开(公告)日:2021-11-18
申请号:US17443604
申请日:2021-07-27
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter , Russell Kanjorski
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A laser array includes a plurality of laser diodes arranged and electrically connected to one another on a surface of a non-native substrate. Respective laser diodes of the plurality of laser diodes have different orientations relative to one another on the surface of the non-native substrate. The respective laser diodes are configured to provide coherent light emission in different directions, and the laser array is configured to emit an incoherent output beam comprising the coherent light emission from the respective laser diodes. The output beam may include incoherent light having a non-uniform intensity distribution over a field of view of the laser array. Related devices and fabrication methods are also discussed.
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公开(公告)号:US10530130B2
公开(公告)日:2020-01-07
申请号:US15951727
申请日:2018-04-12
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter
IPC: H01S5/183 , H01S5/00 , H01S5/026 , H01S5/022 , H01S5/40 , H01S5/42 , H01L31/167 , H01L31/18 , H01L25/00 , H01S3/02 , H01S5/30 , G01S17/02 , F21V5/04 , G02B26/10 , H01S5/062 , G01J1/44 , G01S7/481 , G02B5/08 , G01S17/89 , G02B3/00
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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6.
公开(公告)号:US20180301589A1
公开(公告)日:2018-10-18
申请号:US15951884
申请日:2018-04-12
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter
IPC: H01L31/167 , G01J1/44 , H01S5/40 , H01L31/18
Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.
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公开(公告)号:US12222454B2
公开(公告)日:2025-02-11
申请号:US18169909
申请日:2023-02-16
Applicant: Sense Photonics, Inc.
Inventor: Hod Finkelstein , Dietrich Dehlinger , Scott Burroughs , Brent Fisher
IPC: G01S7/486 , G01S7/481 , G01S7/4863 , G01S7/487
Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.
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公开(公告)号:US20230194679A1
公开(公告)日:2023-06-22
申请号:US18169909
申请日:2023-02-16
Applicant: Sense Photonics, Inc.
Inventor: Hod Finkelstein , Dietrich Dehlinger , Scott Burroughs , Brent Fisher
IPC: G01S7/4863 , G01S7/487 , G01S7/481
CPC classification number: G01S7/4863 , G01S7/4876 , G01S7/4816
Abstract: A Light Detection and Ranging (LIDAR) apparatus includes a detector having a first pixel and a second pixel configured to output respective detection signals responsive to light incident thereon, and receiver optics configured to collect the light over a field of view and direct first and second portions of the light to the first and second pixels, respectively. The first pixel includes one or more time of flight (ToF) sensors, and the second pixel includes one or more image sensors. At least one of the receiver optics or arrangement of the first and second pixels in the detector is configured to correlate the first and second pixels such that depth information indicated by the respective detection signals output from the first pixel is correlated with image information indicated by the respective detection signals output from the second pixel. Related devices and methods of operation are also discussed.
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公开(公告)号:US20220120866A1
公开(公告)日:2022-04-21
申请号:US17511715
申请日:2021-10-27
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter
IPC: G01S7/481 , H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , H01S5/042 , H01S5/02253 , G01S17/894 , F21V5/04 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A semiconductor device includes a detector structure. The detector structure includes an integrated circuit on a substrate, and a photo detector on an upper surface of the integrated circuit that is opposite the substrate, where the substrate is non-native to the photo detector. A System-on-Chip apparatus includes at least one laser emitter on a non-native substrate, at least one photo detector on the non-native substrate, and an input/output circuit. The at least one photo detector of the second plurality of photo detectors is disposed on an integrated circuit between the at least one photo detector and the non-native substrate to form a detector structure.
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10.
公开(公告)号:US20200161835A1
公开(公告)日:2020-05-21
申请号:US16693666
申请日:2019-11-25
Applicant: Sense Photonics, Inc.
Inventor: Scott Burroughs , Brent Fisher , James Carter
IPC: H01S5/183 , H01S5/30 , H01S5/00 , H01S5/026 , G01S17/02 , G01S17/89 , F21V5/04 , H01S5/022 , H01S5/40 , G02B26/10 , H01S5/062 , H01S5/42 , G01J1/44 , H01L31/167 , H01L31/18 , G01S7/481 , G02B5/08 , H01L25/00 , H01S3/02
Abstract: A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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