- Patent Title: Heterojunction bipolar transistors with one or more sealed airgap
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Application No.: US16791214Application Date: 2020-02-14
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Publication No.: US11127816B2Publication Date: 2021-09-21
- Inventor: Siva P. Adusumilli , Rajendran Krishnasamy , Steven M. Shank , Vibhor Jain
- Applicant: GLOBALFOUNDRIES U.S. INC.
- Applicant Address: US CA Santa Clara
- Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee: GLOBALFOUNDRIES U.S. INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Roberts Calderon Safran & Cole, P.C.
- Agent David Cain; Andrew M. Calderon
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/49 ; H01L29/16 ; H01L29/737 ; H01L29/66
Abstract:
The present disclosure relates to semiconductor structures and, more particularly, to a heterojunction bipolar transistor having one or more sealed airgap and methods of manufacture. The structure includes: a subcollector region in a substrate; a collector region above the substrate; a sealed airgap formed at least partly in the collector region; a base region adjacent to the collector region; and an emitter region adjacent to the base region.
Public/Granted literature
- US20210257454A1 HETEROJUNCTION BIPOLAR TRANSISTORS WITH ONE OR MORE SEALED AIRGAP Public/Granted day:2021-08-19
Information query
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