Invention Grant
- Patent Title: Data writing device for variable-resistance memory element and non-volatile flip-flop
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Application No.: US16339818Application Date: 2017-10-31
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Publication No.: US11133046B2Publication Date: 2021-09-28
- Inventor: Takahiro Hanyu , Daisuke Suzuki , Hideo Ohno , Tetsuo Endoh
- Applicant: TOHOKU UNIVERSITY
- Applicant Address: JP Sendai
- Assignee: TOHOKU UNIVERSITY
- Current Assignee: TOHOKU UNIVERSITY
- Current Assignee Address: JP Sendai
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JPJP2016-213779 20161031
- International Application: PCT/JP2017/039342 WO 20171031
- International Announcement: WO2018/079833 WO 20180503
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02

Abstract:
A data write device for a resistive memory element, the resistive memory element including: a conductive electrode provided at one end of the memory element; and a reading electrode provided at the other end of the memory element being configured to vary a resistance of the memory element by applying a write current to the conductive electrode, the data write device for the resistive memory element further includes: a writing means, an output means, and a control means. The output means is provided between a power supply and the reading electrode. As output signals, a read signal from the memory element and a monitor signal to monitor a writing status of the memory element written by the writing means are output from the output means. By the monitor signal, a termination of data-writing into the resistive memory element is detected.
Public/Granted literature
- US20200211611A1 DATA WRITING DEVICE FOR VARIABLE-RESISTANCE MEMORY ELEMENT AND NON-VOLATILE FLIP-FLOP Public/Granted day:2020-07-02
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